| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing apparatus for a silicon carbide single crystal capable of improving the quality and increasing the length thereof without replacing all thermal insulating materials; and to provide a manufacturing method using the same. SOLUTION: The thermal insulator includes: a cylindrical sidewall thermal insulating material 12 which surrounds a sidewall of a reaction container 9; a disk member which is capable of separating mechanically from the sidewall thermal insulating material 12; and an absorbing thermal insulating material 13 which is constituted of a porous material. While being in contact with an inner wall of the sidewall thermal insulating material 12, the absorbing thermal insulating material 13 is arranged on end faces of one end of the reaction container 9 and the other end thereof opposite to the one end. The unreacted raw material gas in the reaction container 9 is discharged from an outlet port 4 provided in a vacuum container 7 via the absorbing thermal insulating material 13. COPYRIGHT: (C)2011,JPO&INPIT
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