| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a bump and an under barrier metal structure that can withstand the narrow pitch between bumps while maintaining the strength. <P>SOLUTION: A semiconductor device includes a semiconductor chip 1, an electrode pad 2 formed on the semiconductor chip 1, an under barrier metal 10 formed on the electrode pad 2, a solder bump 6 formed on the under barrier metal 10, and an underfill material 18 formed to cover the circumference of the under barrier metal 10 and the solder bump 6. The top surface of the under barrier metal 10 serves as the junction interface of the solder bump 6 and the under barrier metal 10, and the underfill material 18 forms a right angle or an obtuse angle at the joint of the side of the bump 6 and the edge of the under barrier metal 10. <P>COPYRIGHT: (C)2011,JPO&INPIT |
