| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a stress-free epitaxially-coated semiconductor wafer that has an excellent edge roll-off value and excellent local flatness while simultaneously avoiding the undesirable crystal defects, back-surface halo, autodoping, and nanotopography action. <P>SOLUTION: A semiconductor wafer has a front surface and a back surface. The semiconductor wafer is configured as follows. According to the photoelastic stress measurement ("SIRD"), a stress-free epitaxial layer is provided on the front surface while nanotopography and "halo" are further provided on the back surface of the semiconductor wafer. The nanotopography is expressed as a PV (=peak to valley) height deviation of≥2 nm and≤5 nm in the square measurement window having an area of 2 mm×2 mm. The halo is expressed by a haze of≥0.1 ppm and≤5 ppm. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
