| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of inspecting defects for inspecting patterns of the uppermost layer, especially hole patterns, at a high S/N ratio. SOLUTION: Diffracted light L2 is generated from a wafer 2 illuminated by illumination light L1 and guided and condensed by a light reception optical system 4, and an image of the wafer 2 by the diffracted light L2 is made to form on an image sensor 5 as an imaging means. An image processing unit 6 detects defects by processing the image captured by the image sensor 5. A polarizing plate 7 is adjusted in such a way that the illumination light L1 may illuminate the wafer 2 with S-polarized light, and the line of intersection of its oscillating surface and the wafer 2 may be in parallel with a wiring pattern formed on the wafer 2 or intersect with it at right angles. A polarizing plate 8 is adjusted in such a way as to extract linearly polarized light of P-polarized light from among diffracted light from the wafer 2. It is thereby possible to inspect hole patterns while distinguishing them from wiring patterns present below the hole patterns and inspect defects in surface layers at a satisfactory S/N ratio. COPYRIGHT: (C)2011,JPO&INPIT
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