发明名称 SEMICONDUCTOR DEVICE AND DRIVE CIRCUIT USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a versatile semiconductor device that detects a temperature of a switching element without increasing the number of pads formed on a semiconductor chip, and can be applied to an insulating gate type switching element. SOLUTION: The semiconductor device includes: a main switching element 1; a serial circuit of a current sensing element 2 connected in parallel thereto and a sensing resistor 3; and a reverse recovery time detecting circuit 5 connected to a sensing voltage terminal SE between the current sensing element 2 and the sensing resistor 3. The reverse recovery time detecting circuit 5 detects a reverse recovery current flowing through a parasitic diode of the current sensing element 2 immediately after the main switching element 1 is turned on, and detects the temperature of the main switching element 1 on the basis of the length of the time when the reverse recovery current flows. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011142700(A) 申请公布日期 2011.07.21
申请号 JP20100000335 申请日期 2010.01.05
申请人 MITSUBISHI ELECTRIC CORP 发明人 KAGAWA YASUHIRO;FURUKAWA AKIHIKO;MIURA NARIHISA;HINO SHIRO;NAKADA SHUHEI;OTSUKA KENICHI;WATANABE AKIHIRO;IMAIZUMI MASAYUKI
分类号 H02M1/00 主分类号 H02M1/00
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