发明名称 PLASMA IMMERSION ION MILLING APPARATUS AND METHOD
摘要 Disclosed is an apparatus and method for low-temperature plasma immersion processing of a variety of workpieces using accelerated ions, wherein low-temperature plasma is distributed around a cylindrical workpiece placed in a chamber, the workpiece is enclosed with a housing including a multi-slot extracting electrode to isolate the workpiece from plasma, and a negative potential sufficient to induce sputtering is applied to the workpiece and the electrode, so that ions from plasma are accelerated within the sheath formed between the extracting electrode and plasma, pass through the slot part of the electrode and bombard the workpiece, thus polishing the surface of the workpiece. This apparatus and method is effective for surface smoothing to ones of nm of large cylindrical substrates particularly substrates for micro or nanopattern transfer. This method includes plasma cleaning, surface activating, surface smoothing, dry etching, deposition, plasma immersion ion implantation and deposition within a single or multi chamber.
申请公布号 WO2011065669(A3) 申请公布日期 2011.07.21
申请号 WO2010KR07418 申请日期 2010.10.27
申请人 KOREA ELECTRO TECHNOLOGY RESEARCH INSTITUTE;CHUNG, SUNG IL;OH, HYUN SEOK;NIKIFOROV, S.A.;KIM, PAN KYEOM;KIM, HYEON TAEG;JEON, JEONG WOO;KIM, JONG MOON 发明人 CHUNG, SUNG IL;OH, HYUN SEOK;NIKIFOROV, S.A.;KIM, PAN KYEOM;KIM, HYEON TAEG;JEON, JEONG WOO;KIM, JONG MOON
分类号 H01L21/3065;H01L21/02;H01L21/302 主分类号 H01L21/3065
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