SEMICONDUCTOR LIGHT EMITTING DEVICE WITH LAYER COMPENSATING FOR THE THERMAL EXPANSION OF THE SUBSTRATE

摘要

A semiconductor structure (14, 16, 18) is grown on a top surface of a growth substrate. The semiconductor structure comprises a Ill-nitride light emitting layer disposed between an n-type region and a p-type region. A curvature control layer (10) is disposed in direct contact with the growth substrate (12). The growth substrate (12) has a thermal expansion coefficient less than a thermal expansion coefficient of GaN and the curvature control layer (10) has a thermal expansion coefficient greater than the thermal expansion coefficient of GaN.