PLASMA PROCESSING APPARATUS

摘要

PURPOSE: A plasma processing apparatus is provided to constantly maintain the etching and depositing property of a substrate by adopting a heater unit which highly maintains the temperature of a top electrode unit. CONSTITUTION: A plasma processing device includes a top electrode unit(100) and a bottom electrode unit which face each other in a process chamber. The top electrode unit includes a gas spray plate(160) and a heater unit(130). The heater unit heats the top electrode unit. The gas spray plate includes a plurality of through holes for spraying gas. The heater unit is bonded with the gas spray plate with soldering.