NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND CONTROL METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To expand a setting range of a threshold voltage of a memory cell by substantially increasing the threshold voltage of the memory cell after program when data is read.

SOLUTION: When data is read, a control circuit applies: a first voltage to a control gate of a selected first memory cell transistor in a NAND column; a second voltage different from the first voltage to a second memory cell transistor which is adjacent to a side of a first selection gate transistor of the selected first memory cell transistor; and a third voltage different from the first and second voltages to a third memory cell transistor which is adjacent to a side of a second selection gate transistor of the selected first memory cell transistor.

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