PURPOSE: A display board is provided to reduce the absolute value of a turn-off voltage of a thin film transistor by forming a larger band gap of a first oxide semiconductor pattern than the band gap of a second oxide semiconductor pattern. CONSTITUTION: An oxide semiconductor pattern(144) is formed on a gate wiring(22) and includes an oxide semiconductor. A data wiring is formed on the oxide semiconductor pattern cross the gate wiring. The oxide semiconductor pattern includes a first oxide semiconductor pattern and a second oxide semiconductor pattern. A first oxide semiconductor pattern(44) includes a first oxide and a third element. A second oxide semiconductor pattern(54) includes a second oxide.
申请公布号
KR20110084005(A)
申请公布日期
2011.07.21
申请号
KR20100004021
申请日期
2010.01.15
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, KI WON;YOON, KAP SOO;KIM, DO HYUN;LEE, HYUN JUNG