SURFACE CLEANING METHOD FOR SILICON WAFER

摘要

The disclosed surface purification method for silicon wafers comprises the following steps: ozone gas is brought into contact with the surface of a wafer, forming an oxide film on the surface thereof (step S1); hydrogen fluoride gas is brought into contact with the surface of the wafer, removing the oxide film formed on the surface thereof (step S2); the surface of the wafer is cleaned using a dicarboxylic chemical solution of oxalic acid or citric acid, preventing microparticle redeposition and removing metal particles (step S3); and the surface of the wafer is cleaned using ozone water, removing microparticles and forming another oxide film (step S4). Thus, the disclosed surface purification method for silicon wafers makes it possible to remove with higher accuracy organic material and microparticles of metal and the like which are deposited on the surface of the wafer using a small amount of chemicals.