| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND FILM FORMING APPARATUS |
| 摘要 |
<p>Disclosed is a method for manufacturing a semiconductor device, wherein a zirconium boride film covering a recessed portion is formed by alternately repeating a step of supplying Zr(BH4)4 and a step of supplying hydrogen radicals. In this method, the temperature of a substrate is controlled within the temperature range where the consumption of Zr(BH4)4 increases as the temperature of the substrate increases. In the step in which excited hydrogen is supplied, excited neon is additionally supplied.</p> |
| 申请公布号 |
WO2011086971(A1) |
申请公布日期 |
2011.07.21 |
| 申请号 |
WO2011JP50138 |
申请日期 |
2011.01.07 |
| 申请人 |
ULVAC, INC.;HATANAKA, MASANOBU |
发明人 |
HATANAKA, MASANOBU |
| 分类号 |
H01L21/285;C23C16/38;C23C16/56;H01L21/28;H01L21/3205;H01L23/52 |
主分类号 |
H01L21/285 |
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