| 摘要 |
In a wafer processing system having an electrode, an electrostatic chuck (ESC) and a confinement chamber portion, the ESC is established to be RF-floating, whereas a confinement chamber portion is grounded during a pre-coating process. Accordingly, the confinement chamber portion and the upper electrode are selectively targeted for pre-coating material deposition. As such, the amount of pre-coating material that is deposited onto the ESC is greatly reduced over that of conventional systems. Therefore, less time, energy and material are needed to remove pre-coating material from the ESC during a wafer auto clean (WAC) process. Further, the upper electrode is established to be RF-floating, whereas the confinement chamber portion is grounded during a WAC process. As such, the cleaning material is selectively targeted toward the confinement hardware portion of the chamber. Therefore, the upper electrode is subjected to less wear during a WAC process. |
