A FABRICATION METHOD OF THROUGH METAL VIA INCLUDING GLASS AREA FOR INSULATION

摘要

PURPOSE: A method for manufacturing a vertically penetrated metal electrode including an insulating glass part is provided to plate or deposit metal on the circumference of a low resistive silicon pillar, thereby lowering the resistance of a penetration resistor under an existing via resistance. CONSTITUTION: A protection pattern for forming a low resistance silicon pillar is formed on one side of a low resistance silicon wafer(S100). The low resistance silicon wafer is etched to form a low resistance silicon pillar(S200). Metal is plated or deposited on the low resistance silicon wafer(S300). The low resistance silicon wafer is bonded with a glass wafer(S400). The bonded glass wafer is dissolved(S500). The bonded low resistance silicon wafer and both sides of the glass wafer are processed(S600).