发明名称 MATERIAL HAVING A MULTILAYER ARCHITECTURE AND INTENDED FOR BEING CONTACTED WITH LIQUID SILICON
摘要 <p>The present invention relates to novel materials intended for being contacted with liquid silicon and having a multilayer architecture, the intermediate layer of which is formed by a silicon carbide matrix containing at least one carbon nodule. The invention also relates to the method for preparing said materials.</p>
申请公布号 KR20110083614(A) 申请公布日期 2011.07.20
申请号 KR20117007594 申请日期 2009.09.03
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE 发明人 GARANDET JEAN PAUL;CAMEL DENIS;DREVET BEATRICE;EUSTATHOPOULOS NICOLAS;ISRAEL RANA
分类号 C04B35/565;C04B35/573;C04B35/64;C04B35/80 主分类号 C04B35/565
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