| 摘要 |
PURPOSE: A multi-gray photo-mask, a method for manufacturing the multi-gray photo-mask, a method for transferring patterns, and a method for manufacturing a thin film transistor are provided to prevent the generation of a dark line on the interface of a semi-transparent part and a transparent part. CONSTITUTION: A multi-gray photo-mask forms a first semi-transparent film, a second semi-transparent film, and a light shielding film are formed on a transparent substrate(11). Transfer patterns including a light shielding part(14), a transparent part, a first semi-transparent part(12), and a second semi-transparent part(13) are formed through patterning processes. The phase difference of the second semi-transparent part and the transparent part is less than 60 degrees, and the phase difference of the first semi-transparent part and the second semi-transparent part is more than 90 degrees with respect to a wavelength in a range between i and g line. The transmittance of the first semi-transmittance part is more than 10%. The transmittance of the second semi-transmittance is more than or equal to 20%.
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