A FABRICATION METHOD OF THROUGH SILICON VIA INCLUDING GLASS AREA FOR INSULATION

摘要

PURPOSE: A method for a vertically penetrated silicon electrode with an insulating glass part is provided to fill insulating glass around a silicon pillar to manufacture a penetration electrode, thereby simplifying manufacturing processes by eliminating a process which fills metal materials in a via hole. CONSTITUTION: A protective pattern is formed on one side of a silicon wafer to form a silicon electrode(S100). The silicon wafer is etched to form a silicon electrode(S200). The silicon wafer is bonded with a glass wafer(S300). The bonded glass wafer is dissolved(S400). Both sides of the silicon wafer and the glass wafer are processed so that the thicknesses of the silicon wafer and the glass wafer become a fixed thickness(S500).