METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to apply a process for freezing the surface of a photosensitive film pattern to a lithography process using masks, thereby forming a micro pattern whose length is between 30nm and 40nm. CONSTITUTION: A reflection preventing film(104) is formed on an etched layer(102). A first photosensitive film is formed on the reflection preventing film. A first photosensitive pattern(106A) is formed by exposing the first photosensitive film to light. A frozen material(110) is coated on the first photosensitive pattern. The surface of the first photosensitive pattern is frozen by a baking process.