| 摘要 |
PURPOSE: A method for polishing a GaN substrate is provided to simultaneously perform a mechanical polishing process and a chemical polishing process, thereby manufacturing a chemically stable substrate. CONSTITUTION: A GaN substrate is fixed to a grinding plate. The GaN substrate is ground(S102). The polished GaN substrate is lapped(S104). The lapped GaN substrate is polished(S106). The ground GaN substrate is dry-etched(S202). The dry-etched GaN substrate is wet-etched(S204).
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