METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH MOS TRANSISTORS COMPRISING GATE ELECTRODES FORMED IN A PACKET OF METAL LAYERS DEPOSITED UPON ONE ANOTHER
摘要
申请公布号
EP1593154(B1)
申请公布日期
2011.07.20
申请号
EP20040702397
申请日期
2004.01.15
申请人
NXP B.V.;IMEC
发明人
LANDER, ROBERT;HOOKER, JACOB, C.;WOLTERS, ROBERTUS, A., M.
