发明名称 |
THIN FILM-FORMING SPUTTERING DEVICE |
摘要 |
An objective of the present invention is to provide a thin-film forming sputtering system capable of a sputtering process at a high rate. A thin-film forming sputtering system 10 includes: a vacuum container 11; a target holder 13 located inside the vacuum container 11; a target holder 13 located inside the vacuum container; a substrate holder 14 opposed to the target holder 13; a power source 15 for applying a voltage between the target holder 13 and the substrate holder 14; a magnetron-sputtering magnet 12 provided behind the target holder 13, for generating a magnetic field having a component parallel to a target T; and radio-frequency antennae 16 for generating radio-frequency inductively-coupled plasma within a space in the vicinity of the target T where the magnetic field generated by the magnetron-sputtering magnet 12 has a strength equal to or higher than a predetermined level. The radio-frequency inductively-coupled plasma generated by the radio-frequency antennae 16 promotes the supply of electrons into the aforementioned magnetic field, so that the sputtering process can be performed at a high rate. |
申请公布号 |
EP2345750(A1) |
申请公布日期 |
2011.07.20 |
申请号 |
EP20090809534 |
申请日期 |
2009.08.25 |
申请人 |
EMD CORPORATION |
发明人 |
SETSUHARA, YUICHI;EBE, AKINORI;HAN, JEON GEON |
分类号 |
C23C14/34;C23C14/35;H01J37/32;H01J37/34;H05H1/46 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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