发明名称 |
Diamond transistor and method of manufacture thereof |
摘要 |
A method of manufacturing a transistor, typically a MESFET, includes providing a substrate including single crystal diamond material having a growth surface on which further layers of diamond material can be deposited. The substrate is preferably formed by a CVD process and has high purity. The growth surface has a root-mean-square roughness of 3 nm or less, or is free of steps or protrusions larger than 3 nm. Further diamond layers are deposited on the growth surface to define the active regions of the transistor. An optional n+ shielding layer can be formed in or on the substrate, following which an additional layer of high purity diamond is deposited. A layer of intrinsic diamond may be formed directly on the upper surface of the high purity layer, followed by a boron doped (“delta doped”) layer. A trench is formed in the delta doped layer to define a gate region.
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申请公布号 |
US7981721(B2) |
申请公布日期 |
2011.07.19 |
申请号 |
US20060912414 |
申请日期 |
2006.04.28 |
申请人 |
DIAMOND MICROWAVE DEVICES LIMITED |
发明人 |
SCARSBROOK GEOFFREY ALAN;TWITCHEN DANIEL JAMES;WORT CHRISTOPHER JOHN HOWARD;SCHWITTERS MICHAEL;KOHN ERHARD |
分类号 |
H01L29/12;C30B25/20;C30B29/04;H01L21/04;H01L29/16;H01L29/30 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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