| 摘要 |
<p>PURPOSE: A fine pattern forming method and film forming device are provided to form a silicon oxidation film on a resist pattern and an organic film, thereby eliminating a process of slimming a resist pattern when a mask pattern or a micro pattern is formed. CONSTITUTION: A thin film(102) and an organic film(103) are successively formed on a semiconductor substrate(101). A photoresist film(104) is formed on the organic film. The photoresist film is exposed and developed to form a resist pattern. The resist pattern is slimmed to form a resist pattern which is made of a photoresist film. A silicon oxidation film(105) is formed on the slimmed resist pattern and the organic film.</p> |
