发明名称 Temperature sensing circuit for low voltage operation
摘要 The present invention discloses a temperature sensing circuit which is adaptive toward low voltage IC environment, it mainly comprises: a temperature sensing unit, a temperature threshold control unit and a transconductance amplifier. The temperature sensing unit includes a bipolar transistor and PMOS transistors, and senses temperature via detecting voltage. The temperature threshold control unit includes PMOS transistors and NMOS transistors, and makes an over-temperature alert signal persistently sent out until temperature is lowered to a specified value when the temperature sensing unit detects an over-temperature state. The transconductance amplifier includes PMOS transistors and NMOS transistors, and makes the temperature sensing circuit of the present invention adapt to a low voltage IC environment. Further, the circuit architecture of the present invention does not require any use of operational amplifier or band-gap voltage reference source. Therefore, the present invention can reduce the production and design cost.
申请公布号 US7980759(B2) 申请公布日期 2011.07.19
申请号 US20080144692 申请日期 2008.06.24
申请人 TAI-1 MICROELECTRONICS CORP. 发明人 TAI JY-DER DAVID
分类号 G01K7/01 主分类号 G01K7/01
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