发明名称 Semiconductor device with improved resin configuration
摘要 A semiconductor device comprises a wiring substrate including a wiring pattern; a semiconductor chip installed on the wiring substrate, including a plurality of pads formed on a surface of the semiconductor chip, which opposes the wiring substrate; a first resin layer covering over a part of the wiring pattern within a region of overlapping the semiconductor chip; and a second resin layer installed between the semiconductor chip and the first resin layer. The pads are oppose to and coupled with a part of the wiring pattern exposed over the first resin layer; and the linear expansion coefficient of the wiring substrate is larger than that of the semiconductor chip, the elastic modulus of the wiring substrate is lower than that of the semiconductor chip and the linear expansion coefficient of the first resin layer is larger than that of the second resin layer. The elastic modulus of the first resin layer is lower than that of the second resin layer.
申请公布号 US7982319(B2) 申请公布日期 2011.07.19
申请号 US20090637345 申请日期 2009.12.14
申请人 SEIKO EPSON CORPORATION 发明人 OGATA YOSHIHARU
分类号 H01L23/52 主分类号 H01L23/52
代理机构 代理人
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