发明名称 |
Semiconductor device, data element thereof and method of fabricating the same |
摘要 |
A method of fabricating a semiconductor device is provided. The method comprises: (a) providing a first and a second conductor; (b) providing a conductive layer; (c) forming a part of the conductive layer into a data storage layer by a plasma oxidation process, wherein the data storage layer is positioned between the first and the second conductor.
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申请公布号 |
US7981742(B2) |
申请公布日期 |
2011.07.19 |
申请号 |
US20080166430 |
申请日期 |
2008.07.02 |
申请人 |
MACRONIC INTERNATIONAL CO., LTD. |
发明人 |
CHIEN WEI-CHIH;CHANG KUO-PIN;LAI ERH-KUN;HSIEH KUANG-YEU |
分类号 |
H01L21/8248 |
主分类号 |
H01L21/8248 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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