发明名称 |
Manufacture method of a multilayer structure having non-polar a-plane {11-20} III-nitride layer |
摘要 |
A manufacture method of a multilayer structure having a non-polar a-plane {11-22} III-nitride layer includes forming a nucleation layer on a r-plane substrate, wherein the nucleation layer is composed of multiple nitride layers; and forming a non-polar a-plane {11-20} III-nitride layer on the nucleation layer. The nucleation layer features reduced stress, reduced phase difference of lattice, blocked elongation of dislocation, and reduced density of dislocation. Thus, the non-polar a-plane {11-20} III-nitride layer with flat surface can be formed.
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申请公布号 |
US7981711(B2) |
申请公布日期 |
2011.07.19 |
申请号 |
US20090468138 |
申请日期 |
2009.05.19 |
申请人 |
NATIONAL CHIAO TUNG UNIVERSITY |
发明人 |
LEE WEI-I;CHEN JENN-FANG;CHIANG CHEN-HAO |
分类号 |
H01L21/00;H01L21/20;H01L21/36;H01L31/06 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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