发明名称 |
Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning |
摘要 |
The process of producing a dual damascene structure used for the interconnect architecture of semiconductor chips. More specifically the use of imprint lithography to fabricate dual damascene structures in a dielectric and the fabrication of dual damascene structured molds.
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申请公布号 |
US7982312(B2) |
申请公布日期 |
2011.07.19 |
申请号 |
US20080222000 |
申请日期 |
2008.08.07 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COLBURN MATTHEW E.;CARTER KENNETH RAYMOND;MCCLELLAND GARY M.;PFEIFFER DIRK |
分类号 |
H01L23/48;B29C33/38;G03F7/00;G03F7/26;H01L21/768 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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