发明名称 Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning
摘要 The process of producing a dual damascene structure used for the interconnect architecture of semiconductor chips. More specifically the use of imprint lithography to fabricate dual damascene structures in a dielectric and the fabrication of dual damascene structured molds.
申请公布号 US7982312(B2) 申请公布日期 2011.07.19
申请号 US20080222000 申请日期 2008.08.07
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 COLBURN MATTHEW E.;CARTER KENNETH RAYMOND;MCCLELLAND GARY M.;PFEIFFER DIRK
分类号 H01L23/48;B29C33/38;G03F7/00;G03F7/26;H01L21/768 主分类号 H01L23/48
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