发明名称 |
Circuit for generating data strobe signal in DDR memory device and method therefor |
摘要 |
The present invention discloses a circuit for generating a data strobe signal in a DDR memory device and a method therefor which can precisely distinguish preamble and postamble periods of the data strobe signal by generating pulses for generating the data strobe signal only in a data strobe signal input period by using an internal clock signal according to CAS latency under a read command, and generating the data strobe signal by using the pulses, and which can improve reliability of the circuit operation by precisely controlling operation timing with the internal clock signal.
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申请公布号 |
US7983101(B2) |
申请公布日期 |
2011.07.19 |
申请号 |
US20100727185 |
申请日期 |
2010.03.18 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
NA KWANG JIN;CHOI YOUNG BAE |
分类号 |
G11C7/00;G11C11/40;G11C7/10;G11C7/22;G11C8/00;G11C11/4076;G11C11/4096 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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