发明名称 |
Inspection method for semiconductor memory |
摘要 |
A method for inspecting a semiconductor memory having nonvolatile memory cells using ferroelectric capacitors is disclosed which comprises, after shelf-aging the ferroelectric capacitor in a first polarized state, the steps of: (a) writing a second polarized state opposite to the first polarized state; (b) shelf-aging the ferroelectric capacitor in the second polarized state; and (c) reading the second polarized state. The temperature or voltage in the step (a) is lower than the temperature or voltage in the step (c). This method for inspecting a semiconductor memory enables to evaluate the imprint characteristics in a short time.
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申请公布号 |
US7982466(B2) |
申请公布日期 |
2011.07.19 |
申请号 |
US20060593018 |
申请日期 |
2006.11.06 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
HIKOSAKA YUKINOBU;TAKAMATSU TOMOHIRO;OBATA YOSHINORI |
分类号 |
G01R31/08;G11C11/22;G11C29/00;G11C29/50;H01L27/105 |
主分类号 |
G01R31/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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