发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
A protective film (56) having a water/hydrogen blocking function is formed so as to cover the periphery of a pad electrode (54a) while being electrically isolated from the pad electrode. A material selected in the embodiment for composing the protective film is a highly moisture-proof material having a water/hydrogen blocking function considerably superior to that of the insulating material, such as palladium (Pd) or palladium-containing material, and iridium (Ir) or iridium oxide (IrOx: typically x=2) or an iridium- or iridium oxide-containing material. An FeRAM capable of reliably preventing water/hydrogen from entering inside, and of maintaining high performance of the ferroelectric capacitor structure (30) may be realized only by a simple configuration.
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申请公布号 |
US7982254(B2) |
申请公布日期 |
2011.07.19 |
申请号 |
US20080969019 |
申请日期 |
2008.01.03 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
NAGAI KOUICHI;SATO KATSUHIRO;SUGAWARA KAORU;TAKAHASHI MAKOTO;KUDOU MASAHITO;ASAI KAZUHIRO;MIYAZAKI YUKIMASA;SAIGOH KAORU |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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