发明名称 Phototransistor with source layer between barrier layer and photosensitive semiconductor layer
摘要 A photo transistor has an active region spaced from a source by barrier. A drain is laterally spaced from the active region. Light incident on the active region creates electron-hole pairs. Holes accumulate at the barrier and modulate the effective barrier height to electrons. A gate reset voltage then is applied to gate which lower the barrier allowing the holes to escape.
申请公布号 US7982178(B2) 申请公布日期 2011.07.19
申请号 US20100688719 申请日期 2010.01.15
申请人 ST-ERICSSON SA 发明人 SHANNON JOHN M.;BROTHERTON STANLEY D.
分类号 H01J5/02;H01L29/417;H01L29/45;H01L29/786;H01L31/112;H01L31/113 主分类号 H01J5/02
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