发明名称 |
Phototransistor with source layer between barrier layer and photosensitive semiconductor layer |
摘要 |
A photo transistor has an active region spaced from a source by barrier. A drain is laterally spaced from the active region. Light incident on the active region creates electron-hole pairs. Holes accumulate at the barrier and modulate the effective barrier height to electrons. A gate reset voltage then is applied to gate which lower the barrier allowing the holes to escape.
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申请公布号 |
US7982178(B2) |
申请公布日期 |
2011.07.19 |
申请号 |
US20100688719 |
申请日期 |
2010.01.15 |
申请人 |
ST-ERICSSON SA |
发明人 |
SHANNON JOHN M.;BROTHERTON STANLEY D. |
分类号 |
H01J5/02;H01L29/417;H01L29/45;H01L29/786;H01L31/112;H01L31/113 |
主分类号 |
H01J5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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