发明名称 |
Method of fabricating a memory cell |
摘要 |
The memory cell of the present invention has two independent storage regions embedded into two opposite sidewalls of the control gate respectively. In this way, the data storage can be more reliable. Other features of the present invention are that the thickness of the dielectric layers is different, and the two independent storage regions are formed on opposite bottom sides of the opening by the etching process and form a shape like a spacer. The advantage of the aforementioned method is that the fabricating process is simplified and the difficulty of self-alignment is reduced.
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申请公布号 |
US7981743(B2) |
申请公布日期 |
2011.07.19 |
申请号 |
US20080039744 |
申请日期 |
2008.02.29 |
申请人 |
NANYA TECHNOLOGY CORP. |
发明人 |
CHEN MAO-QUAN;HSIAO CHING-NAN;HUANG CHUNG-LIN |
分类号 |
H01L21/336;H01L21/302;H01L21/461 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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