发明名称 |
Manufacturing method for semiconductor device embedded substrate |
摘要 |
A manufacturing method for a semiconductor device embedded substrate, includes: a first step of preparing a semiconductor device having a first insulating layer; a second step of arranging the semiconductor device on one surface of a support body; a third step of forming a second insulating layer on the one surface of the support body; a fourth step of removing the support body; a fifth step of forming a third insulating layer on a surface of each of the semiconductor device and the second insulating layer; a sixth step of mounting a wiring substrate on a surface of each of the semiconductor device and the second insulating layer; a seventh step of forming a via-hole in the second insulating layer and the third insulating layer; and an eighth step of forming a second wiring pattern on a surface of each of the first insulating layer and the second insulating layer.
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申请公布号 |
US7981724(B2) |
申请公布日期 |
2011.07.19 |
申请号 |
US20090608492 |
申请日期 |
2009.10.29 |
申请人 |
SHINKO ELECTRIC INDUSTRIES CO., LTD. |
发明人 |
KOBAYASHI TOSHIO;ARAI TADASHI;YAMANO TAKAHARU |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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