发明名称 Voltage stabilization circuit and semiconductor memory apparatus using the same
摘要 A voltage stabilization circuit of a semiconductor memory apparatus includes an operation speed detecting unit configured to detect an operation speed of the semiconductor memory apparatus to generate a detection signal, and a voltage line controlling unit configured to interconnect a first voltage line and a second voltage line in response to the detection signal.
申请公布号 US7983106(B2) 申请公布日期 2011.07.19
申请号 US20090494815 申请日期 2009.06.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM YONG-MI;HWANG JEONG-TEA;LEE JEONG-HUN
分类号 G11C5/14 主分类号 G11C5/14
代理机构 代理人
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