| 摘要 |
<p>PURPOSE: An apparatus and a fabrication method of high-performance TVS are provided to adjust accurately a breakdown voltage of a device by forming a junction in a diffusion prevention layer at low temperature to increase a gradient concentration. CONSTITUTION: A first junction part is formed as at least two doped layers on an upper part of a semiconductor substrate. A second junction part is formed as at least three doped layers on an upper part of the first junction part. A third junction part is formed as at least two doped layers on an upper part of the second junction part. A Zener junction part is attached to a high concentration layer emitter having the concentration higher than the concentration of the third junction part at a center portion of the third junction part. A BJT(bipolar junction transistor) junction part is formed with the first junction part, the second junction part, and the third junction part. A metal wiring is connected to the Zener junction part and the ground formed at the substrate.</p> |
