发明名称 |
Circuit with fuse/anti-fuse transistor with selectively damaged gate insulating layer |
摘要 |
A semiconductor integrated circuit is disclosed which includes a main transistor and at least one of a fuse transistor or an anti-fuse transistor (“fuse/anti-fuse transistor”). Each transistor type includes an active region formed in a semiconductor substrate, a gate stack comprising a gate insulation layer and a gate electrode sequentially formed on the active region, and source/drain regions separated across the gate stack, but the gate insulation layer of the fuse/anti-fuse transistor is selectively damaged during fabrication.
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申请公布号 |
US7982245(B2) |
申请公布日期 |
2011.07.19 |
申请号 |
US20080029618 |
申请日期 |
2008.02.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LIM JUN-HEE;SHIN CHOONG-SUN |
分类号 |
H01L23/52 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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