| 摘要 |
A semiconductor device includes: a semiconductor substrate of silicon carbide of a first conductivity type; a silicon carbide epitaxial layer of the first conductivity type, which has been grown on the principal surface of the substrate; well regions of a second conductivity type, which form parts of the silicon carbide epitaxial layer; and source regions of the first conductivity type, which form respective parts of the well regions. A channel epitaxial layer of silicon carbide is grown over the well regions and source regions of the silicon carbide epitaxial layer. A portion of the channel epitaxial layer located over the well regions functions as a channel region. A dopant of the first conductivity type is implanted into the other portions and of the channel epitaxial layer except the channel region.
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