SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and forming method thereof are provided to test a wafer level. CONSTITUTION: A reflector is placed on a trench which is formed by etching a silicon substrate(120). A lower cladding layer(140) is formed on the reflector. A core layer(160) is formed on the lower cladding layer. The core layer comprises an optical waveguide(170) and a grid. An upper cladding layer(180) is formed on the core layer with materials whose refractive index is lower than the core layer.