发明名称 |
CONTACT FORMATION METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE |
摘要 |
<p>A semiconductor device manufacturing method which achieves a contact of a low resistivity is provided. In a state where a first metal layer in contact with a semiconductor is covered with a second metal layer for preventing oxidation, only the first metal layer is silicided to form a silicide layer with no oxygen mixed therein. As a material of the first metal layer, a metal having a work function difference of a predetermined value from the semiconductor is used. As a material of the second metal layer, a metal which does not react with the first metal layer at an annealing temperature is used.</p> |
申请公布号 |
KR20110081998(A) |
申请公布日期 |
2011.07.15 |
申请号 |
KR20117009210 |
申请日期 |
2009.10.23 |
申请人 |
NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY;FOUNDATION FOR ADVANCEMENT OF INTERNATIONAL SCIENCE |
发明人 |
OHMI TADAHIRO;TERAMOTO AKINOBU;ISOGAI TATSUNORI;TANAKA HIROAKI |
分类号 |
H01L21/28;H01L21/336;H01L21/8234;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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