发明名称 |
METAL GATE STRESS FILM FOR MOBILITY ENHANCEMENT IN FinFET DEVICE |
摘要 |
A CMOS FinFET semiconductor device provides an NMOS FinFET device that includes a compressive stress metal gate layer over semiconductor fins and a PMOS FinFET device that includes a tensile stress metal gate layer over semiconductor fins. A process for forming the same includes a selective annealing process that selectively converts a compressive metal gate film formed over the PMOS device to the tensile stress metal gate film.
|
申请公布号 |
US2011169085(A1) |
申请公布日期 |
2011.07.14 |
申请号 |
US201113041066 |
申请日期 |
2011.03.04 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
XU JEFF J.;WANN CLEMENT H.;YEH CHI CHIEH;CHANG CHI-SHENG |
分类号 |
H01L27/092 |
主分类号 |
H01L27/092 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|