发明名称 |
CHARGE BALANCE POWER DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A charge-balance power device and a method of manufacturing the charge-balance power device are provided. The charge-balance power device includes: a charge-balance body region in which one or more first conductive type pillars as a first conductive type impurity region and one or more second conductive type pillars as a second conductive type impurity region are arranged; a first conductive type epitaxial layer that is formed on the charge-balance body region; and a transistor region that is formed in the first conductive type epitaxial layer. With this invention, it is possible to form the same charge-balance body region regardless of the structure of the transistor region formed on the top side of wafer.
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申请公布号 |
US2011169080(A1) |
申请公布日期 |
2011.07.14 |
申请号 |
US20100967580 |
申请日期 |
2010.12.14 |
申请人 |
YUN CHONG-MAN;KIM SOO-SEONG;OH KWANG-HOON |
发明人 |
YUN CHONG-MAN;KIM SOO-SEONG;OH KWANG-HOON |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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