| 摘要 |
A semiconductor device is provided with a semiconductor chip (1), an electrode pad (2) formed on the semiconductor chip (1), an under barrier metal (10) formed on the electrode pad (2), a solder bump (6) formed on the under barrier metal (10), and an underfill material (18) which is formed so as to cover the periphery of the under barrier metal (10) and the solder bump (6). The top surface of the under barrier metal is formed from the interface at which the solder bump (6) and the under barrier metal (10) join, and the angle of a section, in which the side surface of the bump (6) and the edge surface of the under barrier metal (10) are joined, is a right angle or an obtuse angle. |
