IN-SITU PASSIVATION METHODS TO IMPROVE PERFORMANCE OF POLYSILICON DIODE
摘要
A nonvolatile memory cell including a storage element in series with a diode steering element. At least one interface of the diode steering element is passivated.
申请公布号
WO2011085054(A2)
申请公布日期
2011.07.14
申请号
WO2011US20293
申请日期
2011.01.06
申请人
SANDISK 3D LLC;CHEN, XIYING;HOU, KUN;PAN, CHUANBIN;BANDYOPADHYAY, ABHIJIT;CHEN, YUNG-TIN
