| 发明名称 |
SPIN-TORQUE BASED MEMORY DEVICE USING A MAGNESIUM OXIDE TUNNEL BARRIER |
| 摘要 |
A magnetic tunnel junction stack including a pinned magnetic layer, a tunnel barrier layer formed of magnesium oxide (MgO), a free magnetic layer adjacent to the tunnel barrier layer, and a layer of vanadium (V) adjacent to the free magnetic layer. |
| 申请公布号 |
US2011171493(A1) |
申请公布日期 |
2011.07.14 |
| 申请号 |
US20100684530 |
申请日期 |
2010.01.08 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
WORLEDGE DANIEL C.;HU GUOHAN;SUN JONATHAN Z. |
| 分类号 |
G11B5/33 |
主分类号 |
G11B5/33 |
| 代理机构 |
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代理人 |
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