| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device utilizing a surface plasmon, which achieves a higher sensitivity and a thinner film. <P>SOLUTION: The semiconductor device includes a photoelectric conversion layer 2, a metal microstructure 3 in a continuous or discontinuous cylindrical form embedded in the photoelectric conversion layer 2, and a dielectric film 4 covering an internal side and an external side of the metal microstructure 3. <P>COPYRIGHT: (C)2011,JPO&INPIT |
