发明名称 METHOD OF MANUFACTURING WIRING BOARD FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a wiring board for semiconductor device, saving expensive gold used to form a gold plating layer, unlikely to impart a disadvantage to a high-speed operation of an electrical signal, and relaxing a wiring density, thereby reducing a product price. SOLUTION: In the method of manufacturing the wiring board for semiconductor device configured by forming a wiring pattern having only a wiring 3 required for a final product as a wiring pattern and providing a gold plating layer 4 on the wiring 3, a copper foil layer 14 for forming the wiring pattern is provided on a substrate 2, a photoresist 15 is applied onto the copper foil layer 14, a resist pattern 16 corresponding to the wiring pattern is formed by an exposure and development, the gold plating layer 4 is provided on the copper foil layer 14 exposed from the resist pattern 16, and the copper foil layer 14 is etched using the gold plating layer 4 as an etching resist layer, thereby forming the wiring pattern having the desired wiring 3. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011138935(A) 申请公布日期 2011.07.14
申请号 JP20090298108 申请日期 2009.12.28
申请人 HITACHI CABLE LTD 发明人 ASHIZUKA NORIHIRO
分类号 H01L23/12 主分类号 H01L23/12
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