| 摘要 |
A structure of a strained-silicon transistor includes a PMOS disposed on a substrate, a silicon nitride layer positioned on the PMOS, and a compressive stress film disposed on the silicon nitride layer, wherein the silicon nitride has a stress between −0.1 Gpa and −3.2 Gpa, and the stress of the silicon nitride is smaller than the stress of the compressive stress layer.
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