A BODY-TIED ASYMMETRIC N-TYPE FIELD EFFECT TRANSISTOR
摘要
In one exemplary embodiment of the invention, an asymmetric N-type field effect transistor includes: a source region coupled to a drain region via a channel; a gate structure overlying at least a portion of the channel; a halo implant disposed at least partially in the channel, where the halo implant is disposed closer to the source region than the drain region; and a body-tie coupled to the channel. In a further exemplary embodiment, the asymmetric N-type field effect transistor is operable to act as a symmetric N-type field effect transistor.
申请公布号
WO2011084975(A2)
申请公布日期
2011.07.14
申请号
WO2011US20173
申请日期
2011.01.05
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;CHANG, JOSEPHINE, B.;CHANG, LELAND;LIN, CHUNG-HSUN;SLEIGHT, JEFFREY, W.
发明人
CHANG, JOSEPHINE, B.;CHANG, LELAND;LIN, CHUNG-HSUN;SLEIGHT, JEFFREY, W.