发明名称 Gas Sensor
摘要 [Object] To provide a gas sensor having a self-diagnostic function with a simplified structure. [Means of Realizing the Object] A gas sensor (30) includes two field-effect transistors and gate electrodes on gate insulation films (24) of the two field-effect transistors to detect gas using the gate electrodes. The gas sensor (30) includes a first gate electrode (5), a second gate electrode (6), and voltage applying means. The first gate electrode (5) is provided on one of the field-effect transistors. The second gate electrode (6) is provided on another one of the field-effect transistors. The voltage applying means is for, with the first gate electrode (5) and the second gate electrode (6) coupled to one another by wiring, applying thereto one of a direct-current voltage and an alternating-current voltage having a same potential or a constant voltage difference. The first gate electrode (5) and the second gate electrode (6) are made of different metals. The one field-effect transistor and the other field-effect transistor have approximately the same structures.
申请公布号 US2011169057(A1) 申请公布日期 2011.07.14
申请号 US200913063600 申请日期 2009.06.30
申请人 NATIONAL UNIVERSITY CORPORATION OKAYAMA UNIVERSITY 发明人 TSUKADA KEIJI
分类号 H01L27/088 主分类号 H01L27/088
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